| PART |
Description |
Maker |
| VSMY7852X01-GS08 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Techno
|
Vishay Siliconix
|
| AO4702 |
N-Channel 30-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MCD413A |
P-Channel 40-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC7413 |
P-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC8807L |
P-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDG328P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| AO4824 |
Dual N-Channel 30-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| FDG311N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| MC8810 |
Dual N-Channel Logical Level MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
